Type Designator: FGH60N60SFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc - Maximum Power Dissipation: 378 W
Vce - Maximum Collector-Emitter Voltage: 600 V
Vge - Maximum Gate-Emitter Voltage: 20 V
Ic - Maximum Collector Current: 120 A @25℃
VCEsat - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
VGEth - Maximum G-E Threshold Voltag: 6.5 V
Tj - Maximum Junction Temperature: 150 ℃
tr - Rise Time, typ: 42 nS
Coes- Output Capacitance, typ: 350 pF
Qg - Total Gate Charge, typ: 198 nC
Package: TO247
