KGT25N120NDH TO-3P 1200V 25A 25N120 KEC 25V 1200V ฟิลด์เอฟเฟกต์ทรานซิสเตอร์ IGBT

Type Designator: KGT25N120ND

   Type: IGBT + Anti-Parallel Diode

   Type of IGBT Channel: N

   Pc - Maximum Power Dissipation: 310 W

   Vce- Maximum Collector-Emitter Voltage: 1200 V

   Vge - Maximum Gate-Emitter Voltage: 20 V

   Ic  - Maximum Collector Current: 50 A @25℃

   VCEsat- Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

   VGEth - Maximum G-E Threshold Voltag: 7 V

   Tj  - Maximum Junction Temperature: 150 ℃

   tr  - Rise Time, typ: 50 nS

   Coes - Output Capacitance, typ: 100 pF

   Qg - Total Gate Charge, typ: 200 nC

   Package: TO3PN