QA9N90_F109 Datasheet and Replacement
Type Designator: FQA9N90_F109
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd - Maximum Power Dissipation: 240 W
Vds - Maximum Drain-Source Voltage: 900 V
Vgs - Maximum Gate-Source Voltage: 30 V
Vgs(th) - Maximum Gate-Threshold Voltage: 5 V
Id- Maximum Drain Current: 8.6 A
Tj - Maximum Junction Temperature: 150 °C
Qg - Total Gate Charge: 55 nC
tr - Rise Time: 100 nS
Coss - Output Capacitance: 200 pF
Rds - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-3PN
