Descriptions of Fuji Electric 2SK3522
2SK3522-01 Datasheet and Replacement
Type Designator: 2SK3522-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 335 W
Vdsⓘ - Maximum Drain-Source Voltage: 500 V
Vgsⓘ - Maximum Gate-Source Voltage: 30 V
Vgs(th)ⓘ - Maximum Gate-Threshold Voltage: 5 V
Idⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 16 nC
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO24
